AM1011-500
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN
. 10:1 LOAD VSWR ...
AM1011-500
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
. POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN
. 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY
. SIXPAC™ HERMETIC METAL/CERAMIC PACKAGE
. EMITTER SITE BALLASTED OVERLAY GEOMETRY
. REFRACTORY/GOLD METALLIZATION . LOW THERMAL RESISTANCE . INTERNAL INPUT/OUTPUT MATCHING . CHARACTERIZED UNDER 32µS.,2%
DUTY CYCLE PULSE CONDITIONS
.400 x .600 2LFL (M198) hermetically sealed
ORDER CODE AM1011-500
BRANDING 1011-500
DE S CRI P T IO N
The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Avionic applications involving high pulse burst duty cycles.
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1011-500 is supplied in the SIXPAC™ Hermetic metal/ceramic package with internal input/output matching structures.
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
PDISS IC VCC TJ
Power Dissipation* Device Current*
(TC ≤ 100°C)
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
T ST G
Storage Temperature
Value
1,3 60 27 55 250
− 65 to +200
Unit
W A V °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.11 °C/W
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
B...