AM1214-100

AM1214-100 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 100 W MIN. WITH 6.0 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-100 BRANDING 1214-100 DESCRIPTION The AM1214-100 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. AM1214-100 is supplied in the grounded IMPAC™ hermetic metal/ceramic package with internal input/output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ TSTG Power Dissipation* Device Current* (TC ≤ 100˚C) 270 13.5 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.55 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM1214-100 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. U...