AM1214-175

AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-175 B RA ND IN G 1214-175 DESCRIPTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOL...