Document
AM1214-300
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed
ORDER CODE AM1214-300
BRANDING 1214-300
DESCRIPTION
The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
The AM1214-300 is supplied in the BIGPACâ„¢ Hermetic Metal/Ceramic package with internal Input/Output matching structures.
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RAT.