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AM1214-300 Dataheets PDF



Part Number AM1214-300
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet AM1214-300 DatasheetAM1214-300 Datasheet (PDF)

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ... REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applicatio.

  AM1214-300   AM1214-300


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AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-300 is supplied in the BIGPACâ„¢ Hermetic Metal/Ceramic package with internal Input/Output matching structures. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RAT.


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