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AM1517-012 Dataheets PDF



Part Number AM1517-012
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS
Datasheet AM1517-012 DatasheetAM1517-012 Datasheet (PDF)

AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12 PIN CONNECTION DESCRIPTION The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − .

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AM1517-012 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞ :1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLFL (S042) hermeticallysealed ORDER CODE AM1517-012 BRANDING 1517-12 PIN CONNECTION DESCRIPTION The AM1517-012 power transistor is designed specifically for Satellite communications applications in the 1.5 − 1.7 GHz frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a Refractory/Gold metallization system. The AM1517-012 is supplied in the AMPAC™ Hermetic/Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤100°C) 27 1.25 30 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.5 °C/W *Applies only to rated RF amplifier operation September 1992 1/6 AM1517-012 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit BVCBO BVEBO ICBO hFE IC = 4mA IE = 4mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA IC = .8A 45 3.0 — 15 — — — — — — 1 150 V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT ηc GP Note: f = 1.5 — 1.7GHz f = 1.5 — 1.7GHz f = 1.5 — 1.7GHz = = = PIN = 1.7W PIN = 1.7W PIN = 1.7W VCC = 28V VCC = 28V VCC = 28V 12 55 8.5 13 58 — — — — W % dB AM1517 series vary PIN to achi eve P OUT; perf ormance guaranteed in 50 MHz increment s. Alpha-Suff ix added t o AM1517 P/N designates band segment. A -1500 M -1620 S -1625 1550 MHz 1660 MHz 1675 MHz 2/6 AM1517-012 TYPICAL PERFORMANCE TYPICAL PERFORMANCE vs DRIVE POWER POWER OUTPUT vs TEMPERATURE COLLECTOR EFFICIENCY vs TEMPERATURE TYPICAL PERFORMANCE vs VOLTAGE @ FIXED DRIVE GAIN vs TEMPERATURE 3/6 AM1517-012 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN POUT = 12 W VCC = 28 V Z O = 50 ohms FREQ. L = 1.50 GHz M = 1.60 GHz H = 1.70 GHz ZIN (Ω) 13.0 + j 13.5 13.0 + j 12.0 14.5 + j 12.5 ZCL (Ω) 11.5 + j 5.0 10.5 + j 2.2 9.5 − j 1.5 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = 12 W VCC = 28 V ZO = 50 ohms 4/6 AM1517-012 TEST CIRCUIT All dimensions are in inches. PACKAGE MECHANICAL DATA 5/6 AM1517-012 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6 .


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