AM1517-025
RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
• REFRACTORY/GOLD METALLIZATION • EMITTER S...
AM1517-025
RF & MICROWAVE
TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED ∞:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METALLIC/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 8.5 dB GAIN
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
DESCRIPTION
The AM1517-025 power
transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/Gold metallization system. The AM1517-025 is supplied in the AMPACTM Hermetic/Ceramic package with internal Input/ Output matching structures.
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)
Symbol
Parameter
PDISS IC
Power Dissipation* ( Tc≤ 50 0C) Device Current*
VCC
Collector-Supply Voltage*
Tj
Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance*
* Applies only to rated RF amplifier operation
May 2000
PIN CONNECTION
1
4
2
3
1. Collector 2. Base
3. Emitter 4. Base
Value 45 2.5 30 200
-65 to +200
3.3
Unit W A V 0C 0C
0C/W 1/8
AM1517-025
ELECTRICAL SPECIFICATION(TCASE = 25 0C)
STATIC
Symbol BVCBO BVEBO
ICBO hFE
IC = 8 mA IE = 8 mA VCB = 28 V VCE = 5 V
Parameter IE = 0 mA IC = 0 mA
IC = 1.6 A
Min . 45 3.0 --15
Ty...
