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HYB3116400BJ-60 Data Sheet

3.3V 4M x 4-Bit Dynamic RAM

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HYB3116400BJ-60

3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cy.

HYB3116400BJ-60

Download HYB3116400BJ-60 Datasheet

3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • • • • • • • Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117400BJ/BT-50) max. 363 active mW (HYB3117400BJ/BT-60) max. 330 active mW (HYB3117400BJ/BT-70) max. 360 active mW (HYB3116400BJ/BT-50) max. 324 active mW (HYB3116400BJ/BT-60) max. 288 active mW (HYB3116400BJ/BT-70) 7.2 mW standby (LV-TTL) 3.6 mW standby (LV-CMOS) 720 µW standby for L-version Output unlatched at cycle end allows two-dimensional c.




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