HYB3117400BJ-70

3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117400BJ/BT-50) max. 363 active mW (HYB3117400BJ/BT-60) max. 330 active mW (HYB3117400BJ/BT-70) max. 360 active mW (HYB3116400BJ/BT-50) max. 324 active mW (HYB3116400BJ/BT-60) max. 288 active mW (HYB3116400BJ/BT-70) 7.2 mW standby (LV-TTL) 3.6 mW standby (LV-CMOS) 720 µW standby for L-version Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, Self Refresh and test mode Fast page mode capability All inputs, outputs and clocks fully TTL-compatible 2048 refresh cycles / 32 ms for HYB3117400 4096 refresh cycles / 64 ms for HYB3116400 Plastic Package: P-SOJ-26/24-1 (300 mil) P-TSOPII-26/24-1 (300mil) Semiconductor Group 1 1.96 HYB 3116(7)400BJ/BT(L) -50/-60/-70 3.3V 4Mx4-DRAM The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit technique...