HYB3117800BSJ-70

2M x 8-Bit Dynamic RAM HYB3117800BSJ-50/-60/-70 Advanced Information 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 3.3 V (± 0.3V) supply Low power dissipation max. 432 active mW (-50 version) max. 396 active mW (-60 version) max. 360 active mW (-70 version) 7.2 mW standby (LV-TTL) 3.6 mW standby (CMOS) Output unlatched at cycle end allows two-dimensional chip selection Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh, self refresh and test mode Fast page mode capability All inputs, outputs and clocks fully LVTTL-compatible 2048 refresh cycles / 32 ms Plastic Package: P-SOJ-28-3 400 mil Semiconductor Group 1 1.96 HYB 3117800BSJ-50/-60/-70 2M x 8-DRAM The HYB 3117800BSJ is a 16 MBit dynamic RAM organized as 2097152 words by 8-bits. The HYB 3117800BSJ utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 3117800BSJ to be packaged in a standard SOJ 28 400 mil plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment. S...