3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Description
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60
Preliminary Information
262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS ac...
