HYB3165405ATL-50

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) HYB 3164405AJ/AT(L) -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 Advanced Information 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns Single + 3.3 V (± 0.3V) power supply Low power dissipation: max. 450 active mW ( HYB 3164405AJ/AT(L)-40) max. 360 active mW ( HYB 3164405AJ/AT(L)-50) max. 324 active mW ( HYB 3164405AJ/AT(L)-60) max. 612 active mW ( HYB 3165405AJ/AT(L)-40) max. 405 active mW ( HYB 3165405AJ/AT(L)-50) max. 432 active mW ( HYB 3165405AJ/AT(L)-60) 7.2 mW standby (LVTTL) 3.24 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh Self refresh (L-version only) 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164405AJ/AT) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165405AJ/AT) 256 msec refresh period for L-versions Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400AJ P-TSOPII-32-1 400 mil HYB 3164(5)400AT(L) Semiconductor Group 1 6.97 HYB3164(5)405AJ/AT(L)-40/-50/-60 16M x 4-DRAM This HYB3164(5)405A is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated on an advanced second ge...