DatasheetsPDF.com

HYB3165405BTL-60 Dataheets PDF



Part Number HYB3165405BTL-60
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description 16M x 4-Bit Dynamic RAM
Datasheet HYB3165405BTL-60 DatasheetHYB3165405BTL-60 Datasheet (PDF)

16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405BJ/BT(L) -40/-50/-60 HYB 3165405BJ/BT(L) -40/-50/-60 Preliminary Information • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • • • • • • Si.

  HYB3165405BTL-60   HYB3165405BTL-60


Document
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164405BJ/BT(L) -40/-50/-60 HYB 3165405BJ/BT(L) -40/-50/-60 Preliminary Information • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • • • • • • Single + 3.3 V ( ± 0.3V) power supply Low power dissipation: max. 306 active mW ( HYB 3164405BJ/BT(L)-40) max. 252 active mW ( HYB 3164405BJ/BT(L)-50) max. 216 active mW ( HYB 3164405BJ/BT(L)-60) max. 486 active mW ( HYB 3165405BJ/BT(L)-40) max. 396 active mW ( HYB 3165405BJ/BT(L)-50) max. 324 active mW ( HYB 3165405BJ/BT(L)-60) 7.2 mW standby (LVTTL) 3.6 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh Self refresh (L-version only) 8192 refresh cycles/128 ms, 13 R/ 11C addresses (HYB 3164405BJ/BT) 4096 refresh cycles / 64 ms, 12 R/ 12C addresses (HYB 3165405BJ/BT) 128 msec refresh period for L-versions Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400BJ P-TSOPII-32-1 400 mil HYB 3164(5)400BT(L) Semiconductor Group 1 12.97 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM This HYB3164(5)405B is a 64 MBit dynamic RAM organized 16 777 216 by 4 bits. The device is fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit and process design allow this device to achieve high performance and low power dissipation. The HYB3164(5)405B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a 400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.The HYB3164(5)405BTL parts have a very low power „ sleep mode“supported by Self Refresh. Ordering Information Type 8k-refresh versions: HYB 3164405BJ-40 HYB 3164405BJ-50 HYB 3164405BJ-60 HYB 3164405BT-40 HYB 3164405BT-50 HYB 3164405BT-60 HYB 3164405BTL-50 HYB 3164405BTL-60 4k-refresh versions: HYB 3165405BJ-40 HYB 3165405BJ-50 HYB 3165405BJ-60 HYB 3165405BT-40 HYB 3165405BT-50 HYB 3165405BT-60 HYB 3165405BTL-50 HYB 3165405BTL-60 P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-32-1 P-SOJ-32-1 P-SOJ-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 P-TSOPII-32-1 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil 400 mil DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 40 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) Ordering Code Package Descriptions Semiconductor Group 2 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM P-SOJ-32-1 (400 mil) P-TSOPII-32-1 (400 mil) VCC I/O1 I/O2 N.C. N.C. N.C. N.C. WE RAS . A0 A1 A2 A3 A4 A5 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VSS I/O4 I/O3 N.C. N.C. N.C. CAS OE A12 / N.C. * A11 A10 A9 A8 A7 A6 VSS * Pin 24 is A12 for HYB 3164405BJ/BT(L) and N.C. for HYB 3165405BJ/BT(L) Pin Configuration Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O4 CAS WE Vcc Vss Address Inputs for 8k-refresh version HYB 3164405BJ/BT(L) Address Inputs for 4k-refresh version HYB 3165405BJ/BT(L) Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply ( + 3.3V) Ground Semiconductor Group 3 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM TRUTH TABLE FUNCTION Standby Read Early-Write Delayed-Write Read-Modify-Write Hyper Page Mode Read 1st Cycle 2nd Cycle Hyper Page Mode Write 1st Cycle 2nd Cycle Hyper Page Mode RMW 1st Cycle 2st Cycle RAS only refresh CAS-before-RAS refresh Test Mode Entry Hidden Refresh READ WRITE Self Refresh (L-version only) RAS H L L L L L L L L L L L H-L H-L L-H-L L-H-L H-L CAS H-X L L L L H-L H-L H-L H-L H-L H-L H L L L L L WE X H L H-L H-L H H L L H-L H-L X H L H L H OE X L X H L-H L L X X L-H L-H X X X L X X ROW ADDR X ROW ROW ROW ROW ROW n/a ROW n/a ROW n/a ROW X X ROW ROW X COL ADDR X COL COL COL COL COL COL COL COL COL COL n/a n/a n/a COL COL X I/O1I/O4 High Impedance Data Out Data In Data In Data Out, Data In Data Out Data Out Data In Data In Data Out, Data In Data Out, Data In High Impedance High Impedance High Impedance Data Out Data In High Impedance Semiconductor Group 4 HYB3164(5)405BJ/BT(L)-40/-50/-60 16M x 4-DRAM I/O1 I/O2 I/O4 WE CAS . .


HYB3165405BTL-50 HYB3165405BTL-60 HYB3165405J-50


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)