HSU227

HSU227 Silicon Schottky Barrier Diode for High Speed Switching ADE-208-779(Z) Rev 0 Mar. 1999 Features Low capacitance. (C=3.0pF max) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU227 Laser Mark S3 Package Code URP Outline Cathode mark Mark 1 S3 2 1. Cathode 2. Anode HSU227 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Symbol VRRM Io Value 25 50 *2 Unit V mA mA °C °C IFSM Tj 200 125 -55 to +125 Tstg 1. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Symbol VF IR C Min — — — Typ 0.29 0.3 2.45 Max 0.35 2.0 3.0 Unit V µA pF Test Condition I F = 1mA VR = 20V VR = 1V, 1=1MHz 2 HSU227 Main Characteristic 1.0 Pulse test 10 Forward current IF (A) -1 10 -4 Pulse test 10 -5 10 -2 10-3 Reverse current I R (A) 10 -6 10 -4 -5 10 10 -7 10-6 0 0.1 0.2 0.3 0.4 0.5 0.6 10-8 0 5 10 15 20 25 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 f=1MHz Capacitance C (pF) 1.0 10-1 1.0 10 Reverse voltage VR (V) 40 Fig.2 Capacitance Vs. Reverse voltage 3 HSU227 Package Dimensions Unit : mm Cathode Mark 1.25±0.15 0.3±0.15 1 S3 1.7±0.15 2.5±0.15 2 1. Cathode 2. Anode 0 — 0.10 H...