HSU83

HSU83 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-307A(Z) Rev 1 Jun. 1996 Features High reverse voltage. (VR = 250V) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU83 Laser Mark T Package Code URP Outline Cathode mark Mark 1 T 2 1. Cathode 2. Anode HSU83 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: Symbol VRM VR I FM I FSM IO Tj Tstg *1 Value 300 250 300 2 100 125 –55 to +125 Unit V V mA A mA °C °C 1. Value at duration of 10msec. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — — — Max 1.2 0.2 100 3.0 100 pF ns Unit V µA Test Condition I F = 100 mA VR = 250V VR = 300V VR = 0V, f = 1 MHz I F = IR =30 mA, Irr = 3mA 2 HSU83 Main Characteristic -2 -5 10 10 (A) 10 -3 -6 10 10 -4 -5 Reverse current I R (A) 10 Forward current IF 10 -7 10 -6 10 10 10 -7 10 -8 -8 -9 0 0.2 0.4 0.6 0.8 10 1.0 -9 0 50 100 150 200 250 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz 10 (pF) Capacitance C 1.0 10 -1 10-1 1.0 Reverse voltage V R (V) 10 Fig.3 Capacitance Vs. Re...