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HTIP107

Hi-Sincerity Mocroelectronics

PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. HTIP107 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6735 Issued Date : 1994.08.10...


Hi-Sincerity Mocroelectronics

HTIP107

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Description
HI-SINCERITY MICROELECTRONICS CORP. HTIP107 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6735 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/5 Description The HTIP107 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 80 W Total Power Dissipation (TA=25°C) ...................................................................................................................... 2 W Maximum Voltages and Currents BVCBO Collector to Base Voltage .........




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