HTIP112

HI-SINCERITY MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/5 Description The HTIP112 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 50 W Total Power Dissipation (TA=25°C) ...................................................................................................................... 2 W Maximum Voltages and Currents BVCBO Collector to Base Voltage.......