HUF75321D3

HUF75321D3, HUF75321D3S Data Sheet June 1999 File Number 4351.5 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75321. Features 20A, 55V Simulation Models - Temperature Compensating PSPICE® and SABER© Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.semi.Intersil.com/families/models.htm Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75321D3 HUF75321D3S PACKAGE TO-251AA TO-252AA BRAND 75321D 75321D G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST. S Packaging JEDEC TO-251AA JEDEC TO-252AA SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE DRAIN (FLANGE) 58 CAUTION: These d...