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HUF75337G3 Dataheets PDF



Part Number HUF75337G3
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel MOSFET
Datasheet HUF75337G3 DatasheetHUF75337G3 Datasheet (PDF)

HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 File Number 4369.4 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It w.

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HUF75337G3, HUF75337P3, HUF75337S3S Data Sheet June 1999 File Number 4369.4 75A, 55V, 0.014 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75337. Features • 75A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER© Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www..Intersil.com/families/models.htm • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75337G3 HUF75337P3 HUF75337S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75337G 75337P 75337S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75337S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) JEDEC TO-263AB DRAIN (FLANGE) GATE SOURCE 112 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. SABER© is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HUF75337G3, HUF75337P3, HUF75337S3S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified 55 55 ±20 75 Figure 4 Figures 6, 14, 15 175 1.17 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 50V, VGS = 0V VDS = 45V, VGS = 0V, TC = 150oC 55 - - 1 250 ±100 V µA µA nA Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS VGS = ±20V VGS(TH) rDS(ON) VGS = VDS, ID = 250µA (Figure 10) ID = 75A, VGS = 10V (Figure 9) 2 - 0.011 4 0.014 V Ω RθJC RθJA (Figure 3) TO-247 TO-220AB, TO-263AB - - 0.85 30 62 oC/W oC/W oC/W SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Reverse Transfer Capacitance Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 30V, ID ≅ 75A, RL = 0.4Ω Ig(REF) = 1.0mA (Figure 13) 91 .


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