Document
HUF75545P3, HUF75545S3, HUF75545S3S
Data Sheet September 2002
75A, 80V, 0.010 Ohm, N-Channel, UltraFET® Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN (FLANGE)
Features
• Ultra Low On-Resistance - rDS(ON) = 0.010Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve
HUF75545P3
HUF75545S3S
JEDEC TO-262AA
SOURCE DRAIN DRAIN (FLANGE) GATE
HUF75545S3
Ordering Information
PART NUMBER PACKAGE TO-220AB TO-262AA TO-263AB BRAND 75545P 75545S 75545S HUF75545P3
Symbol
D
HUF75545S3 HUF75545S3S
G
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75545S3ST.
S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HUF75545P3, HUF75545S3, HUF75545S3S 80 80 ±20 75 73 Figure 4 Figure 6 270 1.8 -55 to 175 300 260 UNITS V V V A A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 150oC.
W W/oC oC
oC oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discr.