HUF75639P3

HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 File Number 4477.7 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639. Features 56A, 100V Simulation Models - Temperature Compensated PSPICETM and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Intersil.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUF75639G3 HUF75639P3 HUF75639S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75639G 75639P 75639S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST. Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (TAB) JEDEC TO...