HUF75639S3R4851

HUF75639S3R4851 TM Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75639.‘ Features 56A, 115V Simulation Models - Temperature Compensated PSPICETM and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Intersil.com Peak Current vs Pulse Width Curve UIS Rating Curve Ordering Information PART NUMBER HUF75639S3R4851 PACKAGE TO-262AA R4851 BRAND Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” NOTE: When ordering, use the entire part number. Packaging JEDEC TO-262AA SOURCE DRAIN GATE Symbol D G S Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUF75639S3R4851 UNITS V V V A 115 115 ±20 56 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 300 260 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . ....