HUF76113SK8

HUF76113SK8 Data Sheet October 1999 File Number 4448.2 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76113. Features Logic Level Gate Drive 6.5A, 30V Ultra Low On-Resistance, rDS(ON) = 0.030Ω Temperature Compensating PSPICE™ Model Temperature Compensating SABER Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76113SK8 PACKAGE MS-012AA BRAND 76113SK8 Symbol NC(1) DRAIN(8) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76113SK8T. SOURCE(2) DRAIN(7) SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 1 CAU...