HUF76113T3ST

HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA76113. Features Logic Level Gate Drive 4.7A, 30V Ultra Low On-Resistance, rDS(ON) = 0.031Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER™ Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76113T3ST PACKAGE SOT-223 76113 BRAND Symbol D NOTE: HUF76113T3ST is available only in tape and reel. G S Packaging SOT-223 GATE DRAIN SOURCE DRAIN (FLANGE) ©2003 Fairchild Semiconductor Corporation HUF76113T3ST Rev. B2 HUF76113T3ST Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HUF76113T3ST Drain to ...