HUF76121D3

HUF76121D3, HUF76121D3S Data Sheet October 1999 File Number 4391.5 20A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76121. Features Logic Level Gate Drive 20A, 30V Ultra Low On-Resistance, rDS(ON) = 0.023Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER© Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76121D3 HUF76121D3S PACKAGE TO-251AA TO-252AA BRAND 76121D 76121D Symbol D NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in tape and reel, e.g., HUF76121D3ST. G S Packaging JEDEC TO-251AA SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) G...