HUF76145S3S

HUF76145P3, HUF76145S3S Data Sheet December 2001 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76145. Features Logic Level Gate Drive 75A, 30V Ultra Low On-Resistance, rDS(ON) = 0.0045Ω Temperature Compensating PSPICE® Model Temperature Compensating SABER™ Model Thermal Impedance SPICE Model Thermal Impedance SABER Model Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER HUF76145P3 HUF76145S3S PACKAGE TO-220AB TO-263AB BRAND 76145P 76145S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST. Symbol D JEDEC TO-263AB G S GATE SOURCE DR...