Document
HUFA75329G3, HUFA75329P3, HUFA75329S3S
Data Sheet June 2002
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75329.
Features
• 49A, 55V • Ultra Low On-Resistance, rDS(ON) = 0.024Ω • Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www.fairchildsemi.com • Thermal Impedance PSPICE and SABER Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER HUFA75329G3 HUFA75329P3 HUFA75329S3S PACKAGE TO-247 TO-220AB TO-263AB BRAND 75329G 75329P 75329S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE DRAIN GATE DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
JEDEC TO-263AB
GATE SOURCE
DRAIN (FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
HUFA75329G3, HUFA75329P3, HUFA75329S3S Rev. A
HUFA75329G3, HUFA75329P3, HUFA75329S3S
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified 55 55 ±20 49 Figure 4 Figures 6, 14, 15 128 0.86 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (R GS = 20kΩ) (Note 1) . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and .