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HUFA75344S3S

Fairchild Semiconductor

N-Channel MOSFET

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet June 2003 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power ...


Fairchild Semiconductor

HUFA75344S3S

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HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet June 2003 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344. Features 75A, 55V Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www.Fairchild.com Peak Current vs Pulse Width Curve UIS Rating Curve Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75344G3 HUFA75344P3 HUFA75344S3S HUFA75344S3 PACKAGE TO-247 TO-220AB TO-263AB TO-262AA BRAND 75344G 75344P 75344S 75344S G S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75344S3ST. Packaging SOURCE DRAIN GATE DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB DRAIN (T...




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