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HUFA75823D3S Dataheets PDF



Part Number HUFA75823D3S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet HUFA75823D3S DatasheetHUFA75823D3S Datasheet (PDF)

HUFA75823D3, HUFA75823D3S Data Sheet December 2001 14A, 150V, 0.150 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.150Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3 HUFA75.

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HUFA75823D3, HUFA75823D3S Data Sheet December 2001 14A, 150V, 0.150 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.150Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA75823D3 HUFA75823D3S Symbol D Ordering Information PART NUMBER HUFA75823D3 PACKAGE TO-251AA TO-252AA BRAND 75823D 75823D G HUFA75823D3S S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA75823D3ST. TC = 25oC, Unless Otherwise Specified HUFA75823D3, HUFA75823D3S UNITS V V V A A 150 150 ±20 14 10 Figure 4 Figures 6, 14, 15 85 0.57 -55 to 175 300 260 W W/oC oC oC oC Absolute Maximum Ratings Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTES: 1. TJ = 25oC to 150oC. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2001 Fairchild Semiconductor Corporation HUFA75823D3, HUFA75823D3S Rev. B HUFA75823D3, HUFA75823D3S Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS ID = 250µA, VGS = 0V (Figure 11) VDS = 140V, VGS = 0V VDS = 135V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RθJC RθJA TO-251 and TO-252 1.76 100 oC/W oC/W TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 150 - - 1 250 ±100 V µA µA nA IGSS VGS = ±20V VGS = VDS, ID = 250µA (Figure 10) ID = 14A, VGS = 10V (Figure 9) VGS(TH) rDS(ON) 2 - 0.125 4 0.150 V Ω SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) 800 180 65 pF pF pF Qg(TOT) Qg(10) Qg(TH) Qgs Qgd VGS = 0V to 20V VGS = 0V to 10V VGS = 0V to 2V VDD = 75V, ID = 14A, Ig(REF) = 1.0mA (Figures 13, 16, 17) 43 23 1.5 3.4 8.8 54 29 1.9 nC nC nC nC nC tON td(ON) tr td(OFF) tf tOFF VDD = 75V, ID = 14A VGS = 10V, RGS = 12Ω (Figures 18, 19) 7.7 24 45 26 48 105 ns ns ns ns ns ns Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage SYMBOL VSD ISD = 14A ISD = 7A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 14A, dISD/dt = 100A/µs.


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