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HUFA76609D3S Dataheets PDF



Part Number HUFA76609D3S
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet HUFA76609D3S DatasheetHUFA76609D3S Datasheet (PDF)

HUFA76609D3, HUFA76609D3S Data Sheet January 2002 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DR.

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HUFA76609D3, HUFA76609D3S Data Sheet January 2002 10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA DRAIN (FLANGE) JEDEC TO-252AA DRAIN (FLANGE) Features • Ultra Low On-Resistance - rDS(ON) = 0.160Ω, VGS = 10V - rDS(ON) = 0.165Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width Curve • UIS Rating Curve SOURCE DRAIN GATE GATE SOURCE HUFA76609D3 HUFA76609D3S Symbol D • Switching Time vs RGS Curves Ordering Information PART NUMBER PACKAGE TO-251AA TO-252AA BRAND 76609D 76609D HUFA76609D3 G S HUFA76609D3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76609D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HUFA76609D3, HUFA76609D3S UNITS V V V A A A A 100 100 ±16 10 10 7 7 Figure 4 Figures 6, 17, 18 49 0.327 -55 to 175 300 260 W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TC = 25oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and StorageTemperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg NOTE: 1. TJ = 25oC to 150oC. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 Fairchild Semiconductor Corporation HUFA76609D3, HUFA76609D3S Rev. B HUFA76609D3, HUFA76609D3S Electrical Specifications PARAMETER OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS IDSS IGSS VGS(TH) rDS(ON) ID = 250µA, VGS = 0V (Figure 12) ID = 250µA, VGS = 0V, TC = -40oC (Figure 12) Zero Gate Voltage Drain Current VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC Gate to Source Leakage Current ON STATE SPECIFICATIONS Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250µA (Figure 11) ID = 10A, VGS = 10V (Figures 9, 10) ID = 7A, VGS = 5V (Figure 9) ID = 7A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RθJC RθJA TO-251 and TO-252 3.06 100 oC/W oC/W TC = 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 100 90 - - 1 250 ±100 V V µA µA nA VGS = ±16V 1 - 0.130 0.135 0.140 3 0.160 0.165 0.168 V Ω Ω Ω SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) tr td(OFF) tf tOFF tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(5) Qg(TH) Qgs Qgd CISS COSS CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) VGS = 0V to 10V VGS = 0V to 5V VGS = 0V to 1V VDD = 50V, ID = 7A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 50V, ID = 10A VGS = 10V, RGS = 24Ω (Figures 16, 21, 22) VDD = 50V, ID = 7A V.


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