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HUL7001 Dataheets PDF



Part Number HUL7001
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Hologram Unit
Datasheet HUL7001 DatasheetHUL7001 Datasheet (PDF)

Hologram Unit HUL7001 Hologram Unit For optical information processing 4.8±0.1 0.8×5=4.0±0.2 Index mark for No.1 pin on reverse side 11.2±0.2 8.2±0.2 ø8.0 +0 –0.05 1 2 3 4 5 6 (0.2) (0.5) 2.55±0.2 0.25 Lead frame 3.0±0.2 Unit : mm Features Smaller package size achieved through micro-mirror integration (4.8 × 8.2 × 4.3 mm) Focus error signal detection : SSD method Tracking error signal detection : 3-beam method Low-power semiconductor laser included (0.3) O Y Reference plane Reference plan.

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Hologram Unit HUL7001 Hologram Unit For optical information processing 4.8±0.1 0.8×5=4.0±0.2 Index mark for No.1 pin on reverse side 11.2±0.2 8.2±0.2 ø8.0 +0 –0.05 1 2 3 4 5 6 (0.2) (0.5) 2.55±0.2 0.25 Lead frame 3.0±0.2 Unit : mm Features Smaller package size achieved through micro-mirror integration (4.8 × 8.2 × 4.3 mm) Focus error signal detection : SSD method Tracking error signal detection : 3-beam method Low-power semiconductor laser included (0.3) O Y Reference plane Reference plane Apparent emitting point Apparent emitting point Reference plane Applications CD SEC. X-O-Y (Note): 1.Standard corner R=0.20 max. 2.Thickness of plate:Ni 1µm min.+Au 0.1µm min. 3.Thickness of hologram=2.0mm, n=1.519 Absolute Maximum Ratings (Ta = 25˚C) Parameter Laser beam output Laser reverse voltage Monitor PD reverse voltage Signal processing PD reverse voltage Operating ambient temperature Storage temperature Symbol PO VR(LD) VR(mon) VR Topr Tstg Ratings 0.3 2 12 12 – 10 to +60 – 40 to +85 Unit mW V V V ˚C ˚C Unit Characteristic Specifications (Tc = 25 ± 3˚C) Parameter Threshold current Operating current Operating voltage Laser beam output Focus error signal amplitude Tracking error signal amplitude Focus error signal defocusing Tracking error signal symmetry Focus error signal pull-in range *1 Measurements Symbol Ith*1 IOP PO *1,2 Conditions CW CW IRF = 10µA, VR = 5V CW IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V IRF = 10µA, VR = 5V ,, ,, , , ,, ,,, , ,, 8.1±0.2 min 20 25 0.50 0.78±0.2 1.33±0.2 typ 30 35 1.9 0.15 VOP*1,2 *1,2 IFE*1,3 ITE *1,4 7 0.8 –8 – 30 10 1.3 DFO*1,5 BTE*1,4 DFE*1,3 12 are made using the reference optical system during measurement and the radiant power measurement system on the hologram unit shown in Fig. 2. *2 It should be noted that the RF signal amplitude in these specifications is denoted by I , and represents the amplitude of the 11T RF signal. As in the case described in *1, IRF is measured using the measurement system shown in Fig. 2. *3 The definition is illustrated in Fig. 3. *4 The definition is illustrated in Fig. 4. *5 The definition is illustrated in Fig. 5. , ,, , ,,, SEC. X-O-Y 12 11 10 X 9 8 7 (0.35) 4.33±0.2 2.55±0.2 4.7±0.1 max 40 45 2.4 0.22 13 1.8 +8 + 30 Unit mA mA V mW µA µA % % µm 1 HUL7001 Hologram Unit Characteristic Specifications for Semiconductor Laser, Monitor PD, and Signaling Processing PD (Tc = 25±3˚C) Parameter Semiconductor laser Oscillating wavelength Coherence Monitor current Dark current Capacitance between pinss Shield frequency *6 Measurements Symbol λL*6 λ*6 IP(mon)*7 ID ID(mon)*8 Ct(RF1)*9 Ct(RF2)*9 fC Conditions CW IRF = 10µA, VR = 5V CW IRF = 10µA, VR = 5V CW IRF = 10µA, VR = 5V VR = 2.5V VR = 5V VR = 2.5V, f = 1MHz VR = 2.5V, RL = 50Ω min 775 typ 790 0.5 max 805 0.9 1.2 3.0 30 Unit nm Monitor PD and signal processing PD 0.3 0.7 0.2 0.3 2 3 40 mA nA nA pF pF MHz are made using the radiant power measurement system on the hologram unit. The definition is presented in Fig. 2. *7 Unless otherwise indicated, the values shown are per individual element. *8 The subscript (mon) denotes the element (monitor PD). *9 C t(RF1) denotes the capacitance measured at pin No. 4 or 10 in the electrode connection diagram. Ct(RF2) denotes the capacitance measured at pin No. 5 or 9 in the electrode connection diagram. Connection Diagram (Fig. 1) (a) Pin arrangement Gritty face Represents No.1 pin carved seal on reverse side Pin Description Pin No. 1 2 3 12 11 10 9 8 7 TOP VIEW Function Source voltage Applications pin Monitor current output pin Tracking error signal output pin RF and focus error signal output pin RF and focus error signal output pin Source voltage Applications pin Source voltage Applications pin Tracking error signal output pin RF and focus error signal output pin RF and focus error signal output pin LD + Power supply pin GND pin Calculation IP (mon) I1 + I6 I3 I2 + I4 Pin No. 1 2 3 4 5 6 4 5 6 7 8 9 10 (b) Chip structure Pmon P1 P2 P3 P4 P5 LD P6 P7 P8 P9 P10 LD Pmon : Semiconductor laser chip : Monitor light detecting element P1 ~ P10 : Signal-detection lightdetecting-elements I5 + I10 I7 + I9 I8 PD output current In : Output current when light is received by light detecting element N (n : 1 to 10, N = P1 to P10 ) Monitor PD output current IP (mon) : Output current when light is received by Pmon element Focus error signal FE = (I2+I4+I8) – (I3+I7+I9) Disk-close FE > 0 Disk-far FE < 0 TE = (I1+I6) – (I5+I10) The leading beam is the beam received by light detecting elements P1 and P6. RF = I2+I3+I4+I7+I8+I9 11 12 Electrode Connection Diagram 1,6,7 (VR) P1 P2 P3 P4 P5 P6 P7 P8 P9 P10 Pmon LD 11 LD+ Tracking error signal RF signal 3 4 5 8 9 10 2 12 GND 2 Hologram Unit HUL7001 Optical Block Diagram During Measurement (Fig. 2) (a) Radiant power measurement system of hologram unit (HUL7001) Hologram unit (HUL7001) Optica.


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