HUM2010

HUM2010/HUM2015/HUM2020 W ATE R TOW N DIVISI ON PIN DIODE HIGH POWER STUD DESCRIPTION KEY FEATURES W W W . Microsemi . COM With high isolation, low loss, and low distortion characteristics, this Microsemi Power PIN diode is perfect for the high power switching applications where size and power handling capability are critical. Its advantages also include the low forward bias resistance and high zero bias impedance that are essential for low loss, high isolation and wide bandwidth performance. Hermetically sealed, SOGO passivated PIN chips with full-faced metallurgical bonds on both sides to achieve high reliability and high surge capability. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com !"High Power Stud Mount Package !"High Zero Bias Impedance !"Very Low Inductance and Capacitance !"No Internal Lead Straps !"Small Mechanical Outline APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS MRI Applications High Power Antenna Switching ABSOLUTE MAXIMUM RATINGS Maximum Reverse Voltage Average Power Dissipation @ Stud = 50°C Non-Repetitive Sinusoidal Surge Current (8.3 ms) Storage Temperature Range Operating Temperature Range Thermal Resistance 1000/1500/2000 V 13 W 100 A 65°C to +175°C 55°C to +150°C 7.5°C / W Voltage Ratings [25°C] Reverse Voltage Part type (VR) - Volts IR = 10µA 1000V HUM2010 1500V HUM2015 2000V HUM2020 E L E C T R I C A L S P E C I F I C A T I O N S [25°C] Test Diode Resistance RS Capacitance CT Reverse Current ...