Row Driver. HV7022-C Datasheet

HV7022-C Driver. Datasheet pdf. Equivalent

Part HV7022-C
Description 34-Channel Symmetric Row Driver
Feature HV7022-C 34-Channel Symmetric Row Driver Ordering Information Package Options Device 44 J-Lead Quad .
Manufacture Supertex Inc
Datasheet
Download HV7022-C Datasheet




HV7022-C
HV7022-C
34-Channel Symmetric Row Driver
Ordering Information
Device
44 J-Lead Quad
Ceramic Chip Carrier
Package Options
44 J-Lead Quad
Plastic Chip Carrier
Die in
waffle pack
HV7022-C
HV7022DJ-C
HV7022PJ-C
*For Hi-Rel process flows, refer to page 5-3 of the databook.
HV7022X-C
44 J-Lead Quad
Ceramic Chip Carrier
(MIL-Std-883 Processed*)
RBHV7022DJ-C
Features
Processed with HVCMOS® technology
Symmetric row drive (reduces latent imaging
in ACTFEL displays)
Output voltages up to 230V
Low-power level shifting
Source/Sink current 70mA (min.)
Shift register speed 4MHz
Pin-programmable shift direction
44-lead plastic & ceramic surface-mount packages
Hi-Rel processing available
General Description
The HV7022-C is a low-voltage serial to high-voltage parallel
converter with push-pull outputs. It is especially suited for use as
a symmetric row driver in AC thin-film electroluminescent (ACTFEL)
displays. The HV70 offers 34 output lines, a direction (DIR) pin to
give CW or CCW shift register loading, output enable (OE), and
polarity (POL) control. After DATA INPUT is entered (on the falling
edge of CLOCK), a logic high will cause the output to swing to VPP
if POL is high, or to GND if POL is low.
Absolute Maximum Ratings
Supply voltage, VDD1
Supply voltage, VPP1
Logic input levels1
Ground current 2
-0.3V to +15V
-0.3V to +250V
-0.3V to VDD +0.3V
1.5A
Continuous total power dissipation3: Plastic
Ceramic
1200mW
1500mW
Operating temperature range
Plastic
Ceramic
-40°C to +85°C
-55°C to 125°C
Storage temperature range
-65°C to +150°C
Lead temperature 1.6mm (1/16 inch)
from case for 10 seconds
260°C
Notes:
1. All voltages are referenced to GND.
2. Duty cycle is limited by the total power dissipated in the package.
3. For operation above 25°C ambient derate linearly to maximum operating
temperature at 25mW/°C for plastic and at 15mW/°C for ceramic.
For Detailed circuit and application information, please refer
to Application Note AN-H3.
02/96/022
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex prod1ucts, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.



HV7022-C
Electrical Characteristics
(over recommended operating conditions of VDD = 12V, TA = 25°C and VPP = 230V unless otherwise noted)
HV7022-C
DC Characteristics
Symbol
Parameter
IDD VDD supply current
IPP High voltage supply current
Min Max
10
4
100
750
IDDQ Quiescent VDD supply current
VOH High-level output
HVOUT
Data out
100
195
11
VOL Low-level output
HVOUT
Data out
30
1
IIH High-level logic input current
1
IIL Low-level logic input current
-1
Notes:
1. The total number of ON outputs times the duty cycle must not exceed the allowable package power disspation.
2. Over military temperature range (-55°C to 125°C).
Units
mA
mA
µA
µA
µA
V
V
V
V
µA
µA
Conditions
fCLK = 4MHz
1 Output high1
All Outputs low or High-Z
All Outputs low or High-Z
(125°C)
All VIN = GND or VDD
IO= -70mA (-50mA)2
IO= -500µA
IO= 70mA (+50mA)2
IO= 500µA
VIH = 12V
VIL = 0V
AC Characteristics (VDD = 12V, TC = 25°C)
Symbol
Parameter
fCLK
tW
tSUD
tHD
tSUC
tSUE
tSUP
tHC
tHE
tHP
tDHL
t DLH
tTHL
tTLH
tONH
Clock frequency
Pulse duration clock high or low
Data set-up time before falling clock
Data hold time after falling clock
Setup time clock low before VPPor GND
Setup time enable high before VPPor GND
Setup time polarity high or low before VPPor GND
Hold time clock high after VPPor GND
Hold time enable high after VPPor GND
Hold time polarity high or low after VPPor GND
Delay time high to low level output from clock
Delay time low to high level output from clock
Transition time high to low level serial output
Transition time low to high level serial output
High level turn-on time Q outputs from enable
tONL Low level turn-on time Q outputs from enable
tOFFH
High level turn-off time Q outputs from enable
tOFFL
Low level turn-off time Q outputs from enable
Slew rate, VPP or GND
Min
125
100
100
300
300
300
500
300
300
2
Max
4
150
200
200
100
500
500
1000
500
45
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V/µs
Conditions
CL = 10pF
CL = 10pF
CL = 15pF
CL = 15pF
IO = -50 mA,VOH =195V
RL = 2 kto 95V
IO = 50 mA,VOH =130V
RL = 2 kto 30V
IO = -50 mA,VOH =195V
RL = 2 kto 95V
IO = 50 mA,VOH =130V
RL = 2 kto 30V
With one active output
driving a 4.7 nF load to
VPP or GND







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