HVB14S

HVB14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-484(Z) Rev 0 December 1996 Features Low forward resistance. (rf =7.0Ωmax) Low capacitance. (C=0.25pF typ) CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVB14S Laser Mark H6 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HVB14S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg *1 Value 50 50 100 125 -55Å`+125 Unit V mA mW °C °C 1. Two device total. Electrical Characteristics (Ta = 25°C) * 2 Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note: *1 Symbol VF IR C rf Å\ Min Å\ Å\ Å\ Å\ 200 Typ Å\ Å\ 0.25 Å\ Å\ Max 1.0 100 Å\ 7 Å\ Unit V nA pF Ω V Test Condition I F = 50 mA VR = 50V VR = 50V, f = 1 MHz I F = 10 mA, f = 100 MHz C=200pF, Both forward and reverse direction 1 pulse 1. Failure criterion ; IR ≥ 200nA at VR =50 V 2. Per one device. 2 HVB14S Main Characteristic -1 10 10 -8 10 (A) -3 10 -5 Reverse current I R (A) 10 -9 Forward current IF 10 -10 10 -7 10 -11 10 -9 10 -11 0 0.2 0.4 0.6 0.8 1.0 10 -12 0 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 4 f=100MHz Forward resis...