Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
HVB14S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-484(Z) Rev 0 December 1996 Features
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Description
HVB14S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-484(Z) Rev 0 December 1996 Features
Low forward resistance. (rf =7.0Ωmax) Low capacitance. (C=0.25pF typ) CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HVB14S Laser Mark H6 Package Code CMPAK
Outline
3
2
1 1 Cathode 2 Anode 3 Cathode Anode
(Top View)
HVB14S
Absolute Maximum Ratings (Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg
*1
Value 50 50 100 125 -55Å`+125
Unit V mA mW °C °C
1. Two device total.
Electrical Characteristics (Ta = 25°C) * 2
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Note: Note:
*1
Symbol VF IR C rf Å\
Min Å\ Å\ Å\ Å\ 200
Typ Å\ Å\ 0.25 Å\ Å\
Max 1.0 100 Å\ 7 Å\
Unit V nA pF Ω V
Test Condition I F = 50 mA VR = 50V VR = 50V, f = 1 MHz I F = 10 mA, f = 100 MHz C=200pF, Both forward and reverse direction 1 pulse
1. Failure criterion ; IR ≥ 200nA at VR =50 V 2. Per one device.
2
HVB14S
Main Characteristic
-1
10
10
-8
10
(A)
-3
10
-5
Reverse current I R (A)
10
-9
Forward current IF
10
-10
10
-7
10
-11
10
-9
10
-11
0
0.2
0.4
0.6
0.8
1.0
10
-12
0
10
20
30
40
50
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
10 f=1MHz
4
f=100MHz
Forward resis...
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