HVC132

HVC132 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-429B (Z) Rev 2 Feb. 2000 Features Low capacitance.(C=0.5pF max) Low forward resistance. (rf=2.0 Ω max) Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC132 Laser Mark P2 Package Code UFP Outline Cathode mark Mark 1 P2 2 1. Cathode 2. Anode HVC132 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.5 2.0 Unit µA V pF Ω Test Condition VR = 60V I F = 10 mA VR = 1V, f = 1 MHz I F = 10 mA, f = 100 MHz 2 HVC132 Main Characteristic 10 -2 10 -7 10-4 Forward current I F (A) Reverse current I R (A) 10 -8 10 -6 10 -9 Ta= 75°C 10 -10 10 -8 Ta= 75°C Ta= 25°C 10-11 Ta= 25°C 10 -10 Ta= -25°C 10 -12 Ta= -25°C 10 -12 0 0.2 0.4 0.6 0.8 1.0 10 -13 0 20 40 60 80 100 Forward voltage V F (V) Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 3 Fig.1 Forward current Vs. Forward voltage 10 f=1MHz f=100MHz Forward resistance r f (Ω ) 10 Capacitance C (pF) 10 2 10 1 1.0 10 0 0.1 1.0 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 10...