Antenna Switching. HVC135 Datasheet

HVC135 Switching. Datasheet pdf. Equivalent

Part HVC135
Description Silicon Epitaxial Trench Pin Diode for Antenna Switching
Feature HVC135 Silicon Epitaxial Trench Pin Diode for Antenna Switching ADE-208-818A (Z) Rev 1 Feb. 2000 Fe.
Manufacture Hitachi Semiconductor
Datasheet
Download HVC135 Datasheet



HVC135
HVC135
Silicon Epitaxial Trench Pin Diode for Antenna Switching
ADE-208-818A (Z)
Rev 1
Feb. 2000
Features
Adopting the trench structure improves low capacitance.(C=0.6pF max)
Low forward resistance. (rf=2.0max)
Low operation current.
Ultra small Flat Package (UFP) is suitable for surface mount design and stable rf characteristics in high
frequency.
Ordering Information
Type No.
HVC135
Laser Mark
P5
Package Code
UFP
Outline
Cathode mark
Mark
1 P5 2
1. Cathode
2. Anode



HVC135
HVC135
Absolute Maximum Ratings (Ta = 25°C)
Item
Peak reverse voltage
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Symbol
VRM
VR
IF
Pd
Tj
Tstg
Value
65
60
100
150
125
-55 to +125
Unit
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max
Reverse current
Forward voltage
Capacitance
IR
VF
C
— — 0.1
— — 0.9
— — 0.6
Forward resistance rf
ESD-Capability*1
——
100 —
2.0
Notes 1. Failure criterion ; IR > 100nA at VR =60 V
Unit
µA
V
pF
V
Test Condition
VR = 60V
IF = 2 mA
VR = 1V, f = 1 MHz
IF = 2mA, f = 100 MHz
C = 200pF , Both forward and reverse
direction 1 pulse.
2







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