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HVC317B

Hitachi Semiconductor

Variable Capacitance Diode for tuner

HVC317B Variable Capacitance Diode for tuner ADE-208-445(Z) Rev 0 Apl. 1996 Features • High capacitance ratio. (n =13.0...


Hitachi Semiconductor

HVC317B

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HVC317B Variable Capacitance Diode for tuner ADE-208-445(Z) Rev 0 Apl. 1996 Features High capacitance ratio. (n =13.0 min) Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC317B Laser Mark A5 Package Code UFP Outline Cathode mark Mark 1 A5 2 1. Cathode 2. Anode HVC317B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 35 125 –55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C25 Capacitance ratio Series resistance Matching error Note: 1. n rs ∆ C/C*1 Min — — 9.00 0.60 13.0 — — Typ — — — — — — — Max 10 100 11.5 0.80 — 1.6 6.0 — Ω pF Unit nA Test Condition VR = 30V VR = 30V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 25V, f = 1 MHz C1/ C25 VR = 5V, f = 470 MHz VR = 1 to 25V, f = 1 MHz % C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆ C/C continuous in a reel , expect extention to another group. Calculate Matching Error, (Cmax-Cmin) ∆C/C= Cmin x 100 (%) 2 HVC317B Main Characteristic 10 -6 10 Reverse current I R (A) -7 12 f=1MHz 10 (pF) Capacitance C 10 10 -8 8 -9 6 10-10 10-11 10-12 10 -13 0 4 2 20 40 10 30 Reverse voltage V R (V) 50 0 1.0 10 Reverse voltage V R (V) 10 2 Fig.1 Reverse current Vs. Reverse voltage Fig.2 Capacitance Vs. Reverse voltage 3.0 f=470MHz 2.5 Series resistance r s (Ω) 0.0 -0.5 2.0 LF =∆(LogC)/∆(LogVR ) 2 1...




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