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HVC321B

Hitachi Semiconductor

Variable Capacitance Diode for ET tuner

HVC321B Variable Capacitance Diode for ET tuner ADE-208-845(Z) Rev 0 Mar. 2000 Features • • • • Low voltage type (tunin...


Hitachi Semiconductor

HVC321B

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HVC321B Variable Capacitance Diode for ET tuner ADE-208-845(Z) Rev 0 Mar. 2000 Features Low voltage type (tuning voltage 1 to 10V), it is suitable for ET without DC/DC converter. High capacitance ratio. (n = 10.5 min) Low series resistance. (rs = 1.0 Ω max) and good C-V linearity. Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HVC321B Laser Mark V8 Package Code UFP Outline Cathode mark Mark 1 V8 2 1. Cathode 2. Anode HVC321B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 –55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C10 Capacitance ratio Series resistance Matching error Note 1. n rS ∆C/C* 1 Min — — 29.0 2.55 10.5 — — Typ — — — — — — — Max 10 100 33.0 2.90 — 1.0 2.0 Unit nA Test Condition VR = 15V VR = 15V, Ta= 60°C pF VR = 1V, f = 1MHz VR = 10V, f = 1MHz — Ω % C1/C10 VR = 5V, f = 470MHz VR = 1 to 10V, f = 1 MHz C.C system (Continuous Connected taping system) enable to make any 10 pcs of ∆ C/C continuous in a reel , expect extention to another group. Calculate Matching Error, (Cmax-Cmin) ∆C/C= Cmin x 100 (%) 2 HVC321B Main Characteristic 10–9 50 f = 1MHz 40 Reverse current I R (A) 10–10 (pF) 30 10 –11 Ta=75°C Capacitance C 20 10 –12 10 Ta=25°C 10 –13 0 16 4 8 12 Reverse voltage V R (V) 20 0 0.1 1.0 10 Reverse voltage V R (V...




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