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HVC358B

Hitachi Semiconductor

Variable Capacitance Diode for VCO

HVC358B Variable Capacitance Diode for VCO ADE-208-418(Z) Rev 0 July 1996 Features • • • • High capacitance ratio. (n =...


Hitachi Semiconductor

HVC358B

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Description
HVC358B Variable Capacitance Diode for VCO ADE-208-418(Z) Rev 0 July 1996 Features High capacitance ratio. (n =2.20.min) Low series resistance. (rs=0.4 max) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC358B Laser Mark B2 Package Code UFP Outline Cathode mark Mark 1 B2 2 1. Cathode 2. Anode HVC358B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min — — 19.5 8.00 2.20 — Typ — — — — — — Max 10 100 21.0 9.30 — 0.4 — Ω pF Unit nA Test Condition VR = 15V VR = 15V, Ta =60°C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1 / C4 VR = 1V, f = 470 MHz 2 HVC358B Main Characteristic 10 10 -6 30 f=1MHz -7 25 (A) Reverse current IR 10 10 -8 Capacitance C (pF) 20 -9 15 10 10 -10 -11 10 10 10 -12 5 -13 0 4 8 12 16 Reverse voltage VR (V) 20 0 -1 10 1.0 Reverse voltage VR (V) 10 Fig.1 Reverse current Vs. Reverse voltage Fig.2 Capacitance Vs. Reverse voltage 0.4 f=470MHz 0 Series resistance rs (Ω ) 0.3 LF =∆(LogC)/∆(LogVR ) -0.5 0.2 -1.0 0.1 0 10-1 1.0 Reverse voltage VR (V) 10 -1.5 10-1 1.0 Reverse voltage VR (V) 10 Fig.3 Series resistance Vs. Reverse voltage Fig.4 LF Vs. Reverse voltage 3 HVC358B Package Dimensions Unit ...




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