for VCXO. HVC359 Datasheet

HVC359 VCXO. Datasheet pdf. Equivalent

Part HVC359
Description Variable Capacitance Diode for VCXO
Feature HVC359 Variable Capacitance Diode for VCXO ADE-208-419A(Z) Rev 0 Dec. 1998 Features • High capacita.
Manufacture Hitachi Semiconductor
Datasheet
Download HVC359 Datasheet




HVC359
HVC359
Variable Capacitance Diode for VCXO
Features
High capacitance ratio and good C-V linearity.
To be usable at low voltage.
Ultra small Flat Package (UFP) is suitable for surface mount design.
ADE-208-419A(Z)
Rev 0
Dec. 1998
Ordering Information
Type No.
HVC359
Laser Mark
S
Package Code
UFP
Outline
Cathode mark
Mark
12
1. Cathode
2. Anode



HVC359
HVC359
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Junction temperature
Storage temperature
Symbol
VR
Tj
Tstg
Value
15
125
-55 to +125
Unit
V
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
ESD-Capability*1
Symbol Min Typ Max
IR1 — — 10
IR2 — — 100
C1 24.8 — 29.8
C4 6.0 — 8.3
n 3.0 — —
rs — — 1.5
Å\ 80 — —
Notes 1. Failure criterion ; IR 20nA at VR =10 V
Unit
nA
pF
V
Test Condition
VR = 10V
VR = 10V, Ta = 60 °C
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
C1/C4
VR = 4V, f = 100 MHz
C=200pF , Both forward and reverse direction
1 pulse.
2







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