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HVC376B

Hitachi Semiconductor

Variable Capacitance Diode for VCO

HVC376B Variable Capacitance Diode for VCO ADE-208-687 (Z) Rev 0 Oct. 1998 Features • • • • High capacitance ratio (n=4...


Hitachi Semiconductor

HVC376B

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HVC376B Variable Capacitance Diode for VCO ADE-208-687 (Z) Rev 0 Oct. 1998 Features High capacitance ratio (n=4.3min) and good C-V linearity. High Q circuit can be composed due to low series resistance. (rs=0.8Ωmax) To be usable at low voltage. Ultra small F lat P ackage (UFP) is suitable for surface mount design. Ordering Information Type No. HVC376B Laser Mark B9 Package Code UFP Outline Cathode mark Mark 1 B9 2 1. Cathode 2. Anode HVC376B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 –55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance n rs Min — — 25.0 4.8 4.3 — Typ — — — — — — Max 10 100 28.5 6.8 — 0.8 — Ω pF Unit nA Test Condition VR = 10V VR = 10V, Ta = 60 °C VR = 1V, f = 1 MHz VR = 4V, f = 1 MHz C1/ C4 VR = 1V, f = 470 MHz 2 HVC376B Main Characteristic 10–9 50 f = 1MHz 40 Reverse current I R (A) 10–10 (pF) 30 10 –11 Capacitance C 20 10 –12 10 10–13 0 4 8 12 16 20 0 –1 10 1.0 Reverse voltage V R (V) 10 Reverse voltage V R (V) Fig.1 Reverse current Vs. Reverse voltage Fig.2 Capacitance Vs. Reverse voltage 0.6 f = 470MHz 0.5 Series resistance r s (Ω) 0.4 0.3 0.2 0.1 0 –1 10 1.0 Reverse voltage V R (V) 10 Fig.3 Series resistance Vs. Reverse voltage 3 HVC376B Package Dimensions Unit : mm Cathode Mark 1 B9 1.2 ± 0.10 1.6 ± 0.10 2 0.3 ± ...




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