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HVD131

Hitachi Semiconductor

Silicon Epitaxial Planar Pin Diode for High Frequency Switching

HVD131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-832 (Z) Rev 0 Nov. 1999 Features • Low c...


Hitachi Semiconductor

HVD131

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HVD131 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-832 (Z) Rev 0 Nov. 1999 Features Low capacitance.(C=0.8pF max) Low forward resistance. (rf=1.0 Ω max) Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HVD131 Laser Mark 1 Package Code SFP Outline Cathode mark Mark 1 1 2 1. Cathode 2. Anode HVD131 Absolute Maximum Ratings (Ta = 25°C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VRM VR IF Pd Tj Tstg Value 65 60 100 150 125 -55 to +125 Unit V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Forward voltage Capacitance Forward resistance Symbol IR VF C rf Min — — — — Typ — — — — Max 0.1 1.0 0.8 1.0 Unit µA V pF Ω Test Condition VR = 60V I F = 10 mA VR = 1V, f = 1 MHz I F = 10 mA, f = 100 MHz Note: Please mount soldering SFP by the reflow. ( Reflow condition: 235°C max, for 10 seconds ) Do not use the soldering iron because soldering SFP causes package a big heat stress. 2 HVD131 Main Characteristic 10 -2 10 -7 10 Forward current I F (A) -4 10-8 Reverse current I R (A) 10 -9 -10 10 -6 Ta= 50°C 10 10 -8 Ta= 25°C Ta= 50°C -11 10 Ta= 25°C 10 -10 10 -12 10 -13 10 -12 0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 3 f=100...




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