Frequency Attenuator. HVM14S Datasheet

HVM14S Attenuator. Datasheet pdf. Equivalent

Part HVM14S
Description Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Feature HVM14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-083D(Z) Rev.4 Feb.1.
Manufacture Hitachi Semiconductor
Datasheet
Download HVM14S Datasheet



HVM14S
HVM14S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-083D(Z)
Rev.4
Feb.1999
Features
Low forward resistance. (rf =7.0max)
Low capacitance. (C=0.25pF typ)
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVM14S
Laser Mark
H6
Package Code
MPAK
Outline
3
21
(Top View)
1 Cathode2
2 Anode1
3 Cathode1
Anode2



HVM14S
HVM14S
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Reverse voltage
Forward current
Power dissipation
Junction temperature
VR
IF
Pd *1
Tj
Storage temperature
Tstg
Note: 1. Two device total.
Value
50
50
100
125
-55to+125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C) *2
Item
Symbol Min Typ Max Unit
Forward voltage
Reverse current
Capacitance
VF
IR
C
  1.0 V
  100 nA
0.25 pF
Forward resistance r f
ESD-Capability *1
 7
200   V
Note: 1. Failure criterion ; IR 200nA at VR =50 V
Note: 2. Per one device.
Test Condition
IF = 50 mA
VR = 50V
VR = 50V, f = 1 MHz
IF = 10 mA, f = 100 MHz
C=200pF, Both forward and reverse direction
1 pulse
2







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