Frequency Attenuator. HVM187WK Datasheet

HVM187WK Attenuator. Datasheet pdf. Equivalent

Part HVM187WK
Description Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Feature HVM187WK Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-056E (Z) Rev. 5 J.
Manufacture Hitachi Semiconductor
Datasheet
Download HVM187WK Datasheet



HVM187WK
HVM187WK
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-056E (Z)
Rev. 5
Jun. 1993
Features
Low forward resistance. (rf = 5.5 max)
MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
HVM187WK
Laser Mark
H1
Package Code
MPAK
Pin Arrangement
3
21
(Top View)
1 Anode
2 Anode
3 Cathode



HVM187WK
HVM187WK
Absolute Maximum Ratings (Ta = 25°C)
Item
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature
Note: Per one device
Symbol
VR
IF
Pd*
Tj
Tstg
Value
60
50
100
125
–55 to +125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Condition
Forward voltage
Reverse current
Capacitance
Forward resistance
ESD-Capability
VF
IR
C
rf
——
——
——
3.5 —
200 —
1.0 V
100 nA
2.4 pF
5.5
—V
IF = 10mA
VR = 60V
VR = 0V, f = 1MHz
IF = 10mA, f = 100MHz
*C = 200pF, Both forward and
reverse direction 1 pulse.
Note: Failure criterion; IR 100nA at VR = 60V
10 –2
10–4
10–6
10–8
10–10
10–12
0
0.2 0.4 0.6 0.8
Forward voltage VF (V)
1.0
Fig.1 Forward current Vs. Forward voltage
2







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