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HRB0103B

Hitachi Semiconductor

Silicon Schottky Barrier Diode

HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-491(Z) Rev 0 Apr. 199...


Hitachi Semiconductor

HRB0103B

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HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-491(Z) Rev 0 Apr. 1997 Features Low forward voltage drop and suitable for high effifiency forward current. CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0103B Laser Mark E2 Package Code CMPAK Outline 3 2 1 1 Cathode 2 Anode 3 Cathode Anode (Top View) HRB0103B Absolute Maximum Ratings (Ta = 25°C) *1 Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Note: Symbol VRRM I o*2 Value 30 100 *3 Unit V mA A °C °C IFSM Tj 3 125 -55 to +150 Tstg 1. Per one device 2. See Fig.5, Two device total 3. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF IR Min — — Typ — — Max 0.44 50 Unit V µA Test Condition I F = 100 mA VR = 30V 2 HRB0103B Main Characteristic 10 -2 Pulse test 10 -3 10 10 -4 -3 -2 10 Pulse test Forward current I F (A) Reverse current I R (A) 10 10 -5 10 -4 -6 10 -5 10-7 10 -8 10 -9 10 -6 0 0.1 0.2 0.3 0.4 0.5 10 0 -7 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Io is two device total 20hx15wx0.8t Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage VR is two device total 20hx15wx0.8t 0.08 0.08 Forward power dissipation Pd (W) Reverse power dissi...




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