HRB0103B
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
ADE-208-491(Z) Rev 0 Apr. 199...
HRB0103B
Silicon
Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
ADE-208-491(Z) Rev 0 Apr. 1997 Features
Low forward voltage drop and suitable for high effifiency forward current. CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRB0103B Laser Mark E2 Package Code CMPAK
Outline
3
2
1 1 Cathode 2 Anode 3 Cathode Anode
(Top View)
HRB0103B
Absolute Maximum Ratings (Ta = 25°C) *1
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Note: Symbol VRRM I o*2 Value 30 100
*3
Unit V mA A °C °C
IFSM
Tj
3 125 -55 to +150
Tstg
1. Per one device 2. See Fig.5, Two device total 3. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25°C)
Item Forward voltage Reverse current Symbol VF IR Min — — Typ — — Max 0.44 50 Unit V µA Test Condition I F = 100 mA VR = 30V
2
HRB0103B
Main Characteristic
10 -2 Pulse test 10 -3 10 10
-4 -3 -2
10
Pulse test
Forward current I F (A)
Reverse current I R (A)
10 10
-5
10
-4
-6
10
-5
10-7 10 -8 10
-9
10
-6
0
0.1
0.2
0.3
0.4
0.5
10 0
-7
10
20
30
40
50
Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage
Io is two device total
20hx15wx0.8t
Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage
VR is two device total
20hx15wx0.8t
0.08
0.08
Forward power dissipation Pd (W)
Reverse power dissi...