HRF32

HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D(Z) Rev 4 Jul. 1997 Features Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. HRF32 Laser Mark 32 Package Code LRP Outline Cathode mark Mark 1 32 2 1. Cathode 2. Anode HRF32 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol V *1 RRM Value 90 1.0 Unit V A A °C °C I o*1 I FSM Tj Tstg *2 20 125 -40 to +125 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR — Rth(j-a) Min — — 150 — — Note: 1. Alumina board Typ — — — — — Max 0.8 1.0 — 108 157 Unit V mA V Test Condition I F = 1.0A VR = 90V C=200pF , R=0 Ω , Both forward and reverse direction 1 pulse. *1 °C/W Alumina board Print board *2 (25mm ~25mm ~0.64t 2.0mm 2.0mm 4.2mm Note: 2. Print board (25mm ~25mm ~1.64t 2.0mm 2.0mm 4.2mm 2 HRF32 Main Characteristic 1.0 10–4 10–1 Pulse test 10–5 Pulse test Forward current I F (A) 10–3 10–4 Reverse current IR (A) 0.2 0.4 0.6 0.8 1.0 10–2 10–6 10–5 10–7 10–6 10–7 0 10–8 0 20 40 60 80 100 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage f=1MHz Pulse test 10 Capacita...