Power MOSFETs. HRF3205S Datasheet

HRF3205S MOSFETs. Datasheet pdf. Equivalent

Part HRF3205S
Description 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs
Feature HRF3205, HRF3205S Data Sheet June 1999 File Number 4447.4 100A, 55V, 0.008 Ohm, N-Channel, Power MO.
Manufacture Intersil Corporation
Datasheet
Download HRF3205S Datasheet




HRF3205S
Data Sheet
HRF3205, HRF3205S
June 1999 File Number 4447.4
100A, 55V, 0.008 Ohm, N-Channel, Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
NOTE: Calculated continuous current based on maximum
allowable junction temperature. Package limited to 75A
continuous, see Figure 9.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HRF3205
TO-220AB
HRF3205
HRF3205S
TO-263AB
HRF3205S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the TO-263AB variant in tape and reel, e.g., HRF3205ST.
Packaging
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Features
• 100A, 55V (See Note)
• Low On-Resistance, rDS(ON) = 0.008
• Temperature Compensating PSPICE® Model
• Thermal Impedance SPICE Model
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
4-29
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999



HRF3205S
HRF3205, HRF3205S
Absolute Maximum Ratings TC = 25oC, Unless Othewise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
55
55
V
V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
±20V
V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
100
390
A
A
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Figure 10
Power Dissipation . . .
Derate Above 25oC
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.PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
175
1.17
-55 to 175
W
W/oC
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 300 oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 260 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Breakdown Voltage Temperature
Coefficient
BVDSS ID = 250µA, VGS = 0V
VGS(TH) VGS = VDS, ID = 250µA
IDSS
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TC = 150oC
IGSS
V(BR)DSS/
TJ
VGS = ±20V
Reference to 25oC, ID = 250µA
55 -
2-
--
--
--
- 0.057
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
rDS(ON)
td(ON)
tr
td(OFF)
ID = 59A, VGS = 10V (Figure 4)
VDD = 28V, ID 59A,
RL = 0.47, VGS = 10V,
RGS = 2.5
- 0.0065
- 14
- 100
- 43
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
tf
Qg
Qgs
Qgd
CISS
COSS
VDD = 44V, ID 59A,
VGS = 10V, Ig(REF) = 3mA
(Figure 6)
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 5)
- 70
--
--
--
- 4000
- 1300
Reverse Transfer Capacitance
Internal Source Inductance
Internal Drain Inductance
CRSS
LS
LD
Measured From the Contact Modified MOSFET
Screw on Tab to Center of Die Symbol Showing the
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Devices In-
ductances
D
Measured From the Source
LD
Lead, 6mm (0.25in) From Head-
er to Source Bonding Pad
G
LS
-
-
-
480
7.5
4.5
MAX
-
4
25
250
100
-
0.008
-
-
-
-
170
32
74
-
-
-
-
-
UNITS
V
V
µA
µA
nA
V
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
RθJC
RθJA
TO-220
TO-263 (PCB Mount, Steady State)
S
- - 0.85 oC/W
--
62 oC/W
--
40 oC/W
4-30







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