HRF502A

HRF502A Silicon Schottky Barrier Diode for Rectifying ADE-208-245C(Z) Rev 3 Sep. 1997 Features Low forward voltage drop and suitable for high effifiency rectifying. DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRF502A Laser Mark 502A Package Code DO-214 Outline Cathode mark Mark 502A 1 2 Lot No. 1. Cathode 2. Anode HRF502A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol V *1 RRM Value 20 5 Unit V A A °C °C I o*1 I FSM Tj Tstg *2 100 125 -40 to +125 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current ESD-Capability Thermal resistance Symbol VF IR — Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min — — 250 — — Typ — — — 90 42 Max 0.40 1.0 — — — Unit V mA V Test Condition I F = 5A VR = 20V C=200pF , R=0 Ω , Both forward and reverse direction 1 pulse. *1 °C/W Glass epoxy board Tc=25°C Land size 3.5 6.8 2.0 Unit: mm 2 HRF502A Main Characteristic 2 10 Pulse test 10 -2 Pulse test Ta=75°C Forward current I F (A) 10 Ta=75°C 1.0 Reverse current IR (A) 10 -3 Ta=25°C 10 -4 Ta=25°C 10 -1 10 -2 10 -5 10 -3 0 0.1 0.5 0.4 Forward voltage V F (V) 0.2 0.3 0.6 10 -6 0 5 10 20 15 Reverse voltage VR (V) 25 Fig.1 Forward current Vs. Forward voltag...