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HRP22

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRP22 Silicon Schottky Barrier Diode for Rectifying ADE-208-303A(Z) Rev 1 Jul 1997 Features • • Good for high-frequency...


Hitachi Semiconductor

HRP22

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HRP22 Silicon Schottky Barrier Diode for Rectifying ADE-208-303A(Z) Rev 1 Jul 1997 Features Good for high-frequency rectify. High reliability with glass seal. Ordering Information Type No. HRP22 Cathode Band White Package Code DO-41 Outline 1 Cathode band 2 1. Cathode 2. Anode HRP22 Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Non-Repetitive peak reverse voltage Average rectified current Junction temperature Storage temperature Note: Note: Symbol VRRM VRSM *1 I o*2 Tj Tstg Value 50 50 1.0 125 -40 to +125 Unit V V A °C °C 1. See from Fig.1 to Fig.6 2. 20msec sine wave Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF IR Min — — Typ — — Max 0.55 2.0 Unit V mA Test Condition I F = 1.0A VR = 50V 2 HRP22 Main Characteristic 10 Tj=25 °C Tj=125 °C 10 –2 Forward current I F (A) 1.0 Reverse current I R (A) 10 0 0.2 0.4 0.6 0.8 –3 10 –1 1.0 1.2 1.4 0 10 20 30 40 50 60 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 1.2 5mm 2 mm 1.2 5mm 2 mm 1.0 Average forward current IO (A) 2 mm 1.0 Average forward current IO (A) 2 mm Ceramic Board Print Board Rth=100°C/W 0.8 θ=180°,Sine wave Tj=125°C Rth=153°C/W 0.8 θ=180°,Sine wave Tj=125°C 0.6 VR=50V VR=40V 0.4 VR=20V 0.2 0.6 0.4 VR=50V VR=40V 0.2 VR=20V 0 -25 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 Ambient temperature Ta (...




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