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HRU0203A

Hitachi Semiconductor

Silicon Schottky Barrier Diode for Rectifying

HRU0203A Silicon Schottky Barrier Diode for Rectifying ADE-208-469B (Z) Rev 2 Oct. 1997 Features • Low forward voltage ...


Hitachi Semiconductor

HRU0203A

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HRU0203A Silicon Schottky Barrier Diode for Rectifying ADE-208-469B (Z) Rev 2 Oct. 1997 Features Low forward voltage drop and suitable for high effifiency rectifying. Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRU0203A Laser Mark Y Package Code URP Outline Cathode mark Mark 1 Y 2 1. Cathode 2. Anode HRU0203A Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Symbol V *1 RRM Value 30 200 Unit V mA A °C °C I o*1 IFSM Tj *2 2 125 -55Å`+125 Tstg 1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min — — — Typ — — 520 Max 0.50 50 — Unit V µA Test Condition I F = 200 mA VR = 30V ° C/W Polyimide board *1 Polyimide board 20hx15wx0.8t 1.5 0.8 3.0 Unit: mm 1.5 2 HRU0203A Main Characteristic 2 10 Pulse test 1.0 10 -2 Pulse test 10 -3 Forward current I F (A) 10 -1 Ta=75°C Reverse current I R (A) 10 -2 Ta=25°C 10 -4 Ta=75°C 10 -3 10 -5 Ta=25°C 10 -6 10 -4 10 -5 0 0.2 0.4 0.6 0.8 1.0 10 0 -7 10 20 30 40 50 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 0.20 0A t T Tj =25°C 0.06 0V Forwa...




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