Analog Switch. HS-303RH-T Datasheet
July 1999 File Number 4602.1
CMOS Dual SPDT Analog Switch
Intersil’s Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD Total Dose. These QML
Class T devices are processed to a standard ﬂow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The HS-303RH-T analog switch is a monolithic device
fabricated using Radiation Hardened CMOS technology and
the Intersil dielectric isolation process for latch-up free
operation. Improved total dose hardness is obtained by
layout (thin oxide tabs extending to a channel stop) and
processing (hardened gate oxide). This switch offers low-
resistance switching performance for analog voltages up to
the supply rails. “ON” resistance is low and stays reasonably
constant over the full range of operating voltage and current.
“ON” resistance also stays reasonably constant when
exposed to radiation, being typically 30Ω pre-rad and 35Ω
post 100kRAD(Si). Break-before-make switching is
controlled by 5V digital inputs.
Speciﬁcations for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Speciﬁcations for the HS-303RH-T
are contained in SMD 5962-95813. A “hot-link” is provided
from our website for downloading.
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
-55 to 125
-55 to 125
NOTE: Minimum order quantity for -T is 150 units through
distribution, or 450 units direct.
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
- Gamma Dose (γ) 1 x 105 RAD(Si)
• No Latch-Up, Dielectrically Isolated Device Islands
• Pin for Pin Compatible with Intersil HI-303 Series Analog
• Analog Signal Range 15V
• Low Leakage . . . . . . . . . . . . . . . . 100nA (Max, Post Rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . 60Ω (Max, Post Rad)
• Low Operating Power . . . . . . . . . . 100µA (Max, Post Rad)
HS1-303RH-T (SBDIP), CDIP2-T14
HS9-303RH-T (FLATPACK) CDFP3-F14
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
IN N P
SBDIP TRUTH TABLE
SW1AND SW2 SW3 AND SW4
1 ON OFF
(2130µm x 1930µm x 279µm ±25.4µm)
84 x 76 x 11mils ±1mil
Thickness: 12.5kÅ ±2kÅ
Metallization Mask Layout
Type: Silox (SiO2)
Thickness: 8kÅ ±1kÅ
WORST CASE CURRENT DENSITY:
< 2.0e5 A/cm2
Metal Gate CMOS, Dielectric Isolation
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.
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out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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